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Te paninga CVD Silicon Carbide (SiC).

Te paninga CVD Silicon Carbide (SiC).

Kaainga> Hua- TJNE > Whakakikorua CVD > Te paninga CVD Silicon Carbide (SiC).

SiC paninga angiangi susceptor
SiC paninga angiangi susceptor

SiC paninga angiangi susceptor


Taipitopito Tere:

Kaupapa: I hangaia mō ngā tukanga CVD (1000°C - 1400°C) me te PVD pāmahana-tiketike, ā, ka whakaratohia he tūāpapa tautoko pumau mō ngā anga.

Ngā tawhā matua: Te taratara o te mata Ra < 0.5 μm; te pakeke teitei (>2500 HV); he tino ōrite te tauwehenga o te whakawhānui wera (CTE) (≈ 2.6 x 10⁻⁶/K), ka whakakorea katoatia te piko o te papa, te paheke rānei i puta mai i te ahotea wera.

Whakaahuatanga

He pai te mahi a te Semixlab hei ārai i te waikeri. Ka whakamahia whānuitia tēnei hua ki ngā taputapu CVD PVD ā-haurua hei tautoko i ngā waikeri, hei ārai hoki i ngā kino me ngā maturuturunga ohorere i puta mai i te rere o te hauota.

Ko te turanga warowaihā silicon pania ki te SiC (Susceptor pania ki te SiC) e whakamahia whānuitia ana i roto i ngā haurua-ā-ira nā ōna āhuatanga pēnei i te ātete ki te pāmahana teitei, te ātete ki te waikura, te parakore teitei me te iti ake o te parahanga ki ngā wafers.

Taupānga:

He mea hanga motuhake mō ngā tukanga CVD ā-haurua (1000°C - 1400°C) me te PVD pāmahana-tiketike, e whakarato ana i tētahi tūāpapa tautoko pumau mō ngā anga.

Nga waahanga matua:

Te pūmautanga tino pai i te pāmahana teitei: Ka ātete ki ngā pāmahana tino nui atu i te 1400°C, kia tika ai te tūnga o te anga whakarewa me te kore he peka ke.

Parenga tino kaha: Ātete pai ki te pānga o te rere o te hauota >10 m/s me ngā maturuturunga ohorere, e whakarato ana i te tiakitanga mōrahi mō te papa.

Te pakari tino pai: He tino pakari (>2500 HV) te paninga SiC, ā, he ātete hoki ki te waikura, e roa ake ai te ora o te mahi.

Mata parakore teitei: Te taratara o te mata Ra < 0.5 μm, ka whakaiti i te mōrearea o te poke o ngā matūriki.

turanga Silicon (Susceptor Silicon)

Te Whakamahinga: He pai mō ngā tukanga pāmahana teitei o ngā anga silicon me ngā whakaritenga tino teitei mō te taurite wera (pēnei i te tipu epitaxial, <1200°C).

Nga waahanga matua:

● Te ōritetanga wera tino tika: E hangai ana ki te rauemi wafer (monocrystalline silicon), he tino ōrite te tauwehenga o te whakawhānui wera (CTE) (≈ 2.6 x 10⁻⁶/K), ā, ka kore rawa e piko te wafer, e paheke rānei i puta mai i te ahotea wera.

● Tukunga tere: Kua tino poto te huringa tuku o ngā hua paerewa, tae noa ki te 4-6 wiki (ki te whakaritea ki te 8-12 wiki mō ngā turanga SiC).

● Teitei te parakore: E tutuki ana i ngā paerewa o ngā rauemi silicon kounga-haurua-ira.

● Kounga mata: He tino oro, he taratara te mata Ra < 0.2 μm.

Whakatakotoranga
Ko nga ahuatanga taketake o te paninga CVD SiC
Āhuatanga Te Uara Tino
Hanganga Kiriata FCC β wāhanga polycrystalline, te nuinga (111) hāngai
kiato 3.21 g / cm³
pakeke 2500 Vickers pakeke(500g uta)
Rahi kiko 2 ~ 10μm
Te maamaa matū 99.99995 orau
Raukaha Raukaha 640 J·kg-1·K-1
Te Mahana Whakararo 2700 ℃
Te Kaha Awhina 415 MPa RT 4-tohu
Te Tauira a Young 430 Gpa 4pt piko, 1300℃
Mahinga Ngawha 300W·m-1·K-1
Roha Ngawha(CTE) 4.5 × 10-6K-1
tono

Pūwhakapūmau karāpeti tipu paparanga epitaxial SiC.

Te hurihanga o te urunga hau me te whakahaere i te papa wera i roto i te oumu tipu epitaxial SiC.

Toa Hua Semixlab

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