Te Hoe Hukarere Silicon Carbide

Ko te Hoe Cantilever Silicon Carbide he wāhanga ahumahi mahi-teitei e hangai ana ki te hangarau Reaction Bonded SiC (RBSiC). I hangaia mō ngā āhuatanga uaua pēnei i te tukatuka wafer semiconductor, te paninga pūtau photovoltaic me te whakatakotoranga kohu matū pāmahana teitei (CVD). Ko tōna hanganga cantilever ringa-kotahi ahurei, me ngā āhuatanga ātete tino nui o te silicon carbide, ka taea tonu te pupuri i te tika o te whakarerekētanga taumata-mirimita i roto i te taiao pāmahana teitei tonu o te 1350℃, ka noho hei otinga hou hei whakakapi i te quartz tuku iho, ngā koranu whakarewa me ētahi atu rauemi.

Te whanaketanga rauemi: Te hanga hou i te hangarau o te warowaihā silicon

1. Te merekara iti o te tukanga sintering tauhohenga

E tata ana ki te 10-15% o te wāhanga silicon kore utu ka hangaia i te rohe kakano o te hoe cantilever mā te tukanga sintering tauhohenga o te rewa silicon e uru ana ki te preform sic, ka hanga he hanganga hononga-toru-ahu. Mā tēnei hanganga iti ka hoatu he mātotoru o te 3.02 g/cm³, he porosity iti iho i te 0.1%, me te kaha piko tae atu ki te 250 MPa (20 ℃) ​​me te pupuri i te taumaha mama (40% iti iho i te maitai kore waikura), me te pupuri i te modulus elastic o te 300 GPa ahakoa i te 1200 ℃.

2. Te taurite mutunga o ngā tawhā thermodynamic

Ko te tauwehenga whānui wera (CTE) o te cantilever e whakahaeretia tika ana i te 4.5 × 10-6K-1, he mea tino ōrite ki te rauemi paninga o te taputapu LPCVD (low pressure chemical Vapor deposition) hei whakaiti i te ahotea atanga i puta mai i te kore ōritenga wera. Ka eke tōna kawe wera ki te 45 W/(m·K) i te 1200℃, ka taea te mimiti tere i te wera me te karo i te wera nui o te rohe, ā, me te hoahoa patent o te huinga poka whakamarara wera, he iti iho i te 2℃/m² te rerekētanga pāmahana o te paepae wafer.

Painga hangarau: Te peke atu i te taiwhanga ki te whakaputa papatipu

1. Hoahoa urutau aunoa

Ko te horahanga kawenga o te hoe cantilever he hanganga matapihi modular (tika whakatuwheratanga ±0.05mm), e tautoko ana i te pūnaha hopu hononga 12-tuaka kua rite ki ngā anga 150-300mm, ā, he hototahi ki te ringa karetao. Ko ngā pito pumau i whakaratohia he matotoru pakitara piki (δ₁=8.6mm ki te δ₁ 4.8mm) hei whakarite i te pakari o te hanganga me te whakaiti i te taumaha katoa mā te 22% i roto i te ₃ hei whakatutuki i ngā whakaritenga pumau hihiri i roto i te tuku tere-tiketike.

2. Te Huringa i roto i te whakahaere parahanga

Mā te whakaputanga ā-roto o te paparanga whakangāwari SiO₂ 2-5μm ki runga i te mata, ko te mata cantilever i roto i te hau waikura kei roto ko te Cl₂, HF, te katote whakarewa he iti iho i te 0.1 ppb, he 3 ngā whakarea o te kaha te iti iho i te rauemi alumina. I muri i te 1000 whakamātautau huringa pāmahana-tiketike, ko te maha o ngā matūriki mata e taka ana he iti iho i te 5 /m2, e tutuki ana i ngā whakaritenga horoi Akomanga 10 o te hanga semiconductor.

Taipitopito Tere:

1. Ētahi atu ingoa: Hoe whakawhiti wafer pāmahana teitei; Waka cantilever RBSiC; Papa cantilever pania; Cantilever Monolithic SiC.

2. Whakamahinga: 

Te hanga i ngā mea hiko-haurua: Te kawe i ngā anga i roto i ngā oumu horapa, ngā oumu whakamahana, ngā oumu whakahāora me ētahi atu taputapu.

Paninga photovoltaic: Tautoko i te kawe i te tukanga wafer PECVD pūtau TOPCon/HJT,

3. Ngā tawhā matua: Ko te kaha piko he 380 MPa (mahana rūma) →280 MPa (1400℃), ko te tauwehenga whānui wera he 4.2×10⁻⁶/℃, ā, ko te tere waikura o te 40% HF he iti iho i te 0.008 mm/tau. Āhua kore mahi 1600℃ te whakamahinga tonu, taiao waikura 1400℃, tautoko i te huringa ru wera 1400℃↔25℃ 500 ngā wā.

Te hanga anga whakarewa haurua-arataki

Whatanga anga oumu horapa: I roto i te tukanga tāpiritanga phosphorus/boron, ka tukuna te anga silicon 300mm ki te 1250℃/8 hāora o te maimoatanga wera, ā, he iti iho i te 0.1mm/m te taurangi āhua.

Paepae tipu epitaxial: Mō te whakatakotoranga MOCVD o ngā paparanga epitaxial SiC, e tautoko ana i te tūnga nano o ngā papa i raro i te korehau 10-6 Torr.

Te hanga pūtau photovoltaic

Waka paninga PERC: i tukuna ki te pupuhi plasma 800℃ i roto i ngā taputapu PECVD, ko te roanga mahi neke atu i te 5000 ngā wā, 8 ngā wā teitei ake i ngā rauemi karāhe.

Te whakapūtanga taiaho TOPCon: Mā te pūnaha taiaho me te whānui o te pāorooro o te 10ns, ka tutuki te tika o te whakapūtanga whiriwhiri o te paparanga silicon polycrystalline o muri me te ±3μm.

1. Te putanga whakararuraru i ngā āhuatanga rauemi

Ka whakamahia e te poroporo cantilever silicon carbide te hangarau silicon carbide sintering tauhohe (RBSiC), ā, ka uru ki roto i te anga silicon carbide mā roto i te silicon rewa kia puta ai he hanganga matotoru me te porosity < 0.5%. Ko tōna kaha piko he teitei ki te 380 MPa (mahana rūma), ā, ka mau tonu te kaha o te 280 MPa i te pāmahana teitei 1400℃.

2. Te pumau i roto i ngā taiao tino kino

Ātete pāmahana teitei: te pāmahana mahi tonu tae atu ki te 1600℃ (hauātea kore mahi), te ātete wā poto ki te 1800℃ pāmahana teitei inamata (pēnei i te tukanga sintering laser), kāore he mōrearea whakangawari, whakapēhanga rānei.

Ātete ki te waikura: Ko te tere waikura o ngā waikawa kaha pēnei i te HF, te HCl, me te H₂SO₄ < 0.01 mm/tau. Ko te roa o te ora i roto i ngā rūma tauhohenga CVD kei roto te Cl₂/O₂ kua piki ake i te 5-8 ngā wā ki te whakaritea ki ngā rauemi karāti.

Ātete ki te ru wera: Tautoko i te huringa huringa pāmahana tere 1400℃ ↔ 25℃ (ΔT=1375℃), kāore he pakaru, he ngoikore rānei te kaha i muri i te 500 huringa.